Postdoc to perform characterization on nitride based quantum dot structures
The tasks are focused towards material development of semiconductor quantum structures, with the objective to develop optical devices such as advanced light emitting diodes (LEDs). These quantum structures are epitaxially grown nitride-based semiconductors; GaN, InN and AlN and alloys thereof. These structures have a non-planar geometry, where the active optical elements are zero dimensional quantum dots. The primary tasks are characterization of these quantum dots structures, by means of optical, electrical and structural methods (e.g. micro-luminescence, SEM / TEM, FIB / AFM).
The PD will work within the group for Low-Dimensional Materials, a sub-group of the Semiconductor Materials Division. This person will be a member in a team working on nitride-based quantum dot structures, and will complement the group's expertise in epitaxial growth and processing with his/her advanced characterization skills.
We are looking for someone who has a PhD in the field of semiconductor-based quantum structures. The applicant should have experience of advanced characterization of quantum structures, involving both optical, electrical and structural characterization. It is particularly meritorious to have experience of such characterization applied on nitride-based quantum structures. Experience of MOCVD epitaxy of nitride structures is also meritorious.
We see it as advantageous that the applicant has additional experience in advanced characterization, performed after the PhD.