Investigation of Reliability Issues of High-Voltage 4H-SiC MOSFETs
The proposed research activity focuses on the investigation of reliability issues and achievable performance of 4H-SiC MOSFETs for power conversion applications as replacement for Si-based MOSFETs.
In this project, a detailed activity of devices simulations, physical modeling and reliability investigations will be addressed. The simulation decks of power trench-based 4H-SiC FETs will be set up by accounting for the geometry, the different stacks of materials, the layers of passivation encapsulation materials on top. More specifically, the electrical properties of the materials which are nowadays proposed for such new technologies will be addressed.
The main goal will be the determination and comparison of performance stability and robustness of the devices for different geometries, by varying the interface trap configurations and the operating temperatures.
This job comes from a partnership with Science Magazine and