3D Flash Device Researcher

July 11 2017
Position Type
Full Time
Organization Type


Imec is the world-leading research and innovation hub in nanoelectronics and digital technologies. The combination of our widely acclaimed leadership in microchip technology and profound software and ICT expertise is what makes us unique. By leveraging our world-class infrastructure and local and global ecosystem of partners across a multitude of industries, we create groundbreaking innovation in application domains such as healthcare, smart cities and mobility, logistics and manufacturing, and energy.

As a trusted partner for companies, start-ups and universities we bring together close to 3,500 brilliant minds from over 70 nationalities. Imec is headquartered in Leuven, Belgium and also has distributed R&D groups at a number of Flemish universities, in the Netherlands, Taiwan, USA, China, and offices in India and Japan. All of these particular traits make imec to be a top-class employer. To strengthen this position as a leading player in our field, we are looking for those passionate talents that make the difference!

The job

Today the non-volatile memory (NVM) market is largely dominated by the Flash technology. Although the 2D scaling of Flash memories faces severe physical limitations below the 15nm node, the successful 3D integration of Flash chips has been demonstrated by memory companies, so that Flash has clearly consolidated its position as highest-density NVM technology. IMEC has a long-standing expertise in Flash technology and undertook a few years ago the development of 3D Flash vehicles in its 300mm Pilot line in order to better understand and improve the device properties in this new integration configuration imposing constraints on materials, thermal budgets, stress, etc. One of the current limitations of 3D Flash is the low drive current, due to the poor conduction of conventional poly-Si channel. Low current will eventually limit the vertical scaling of 3D devices, calling for the investigation of alternative channel materials with better effective mobility (such as SiGe, Ge and in general III-V compounds). The key challenges to address are process/material improvements and device physics understanding and modeling. Another key area of 3D Flash is the impact of the mechanical stress in these tall structures (industry announces 64 layers within next 2 years) on electrical properties of Flash devices, which is a new field of investigation.

To further strengthen our device characterization team, we are currently looking for a device researcher with both a solid background in semiconductor device physics and a strong expertise in electrical characterization of Memory device (preferably Flash), to perform advanced device characterization and investigation of integrated 3D Flash having high-mobility channel materials, as well as investigation of novel effects/physics observed on 3D structures, such as impact of mechanical stress on device properties. Overall the position requires electrical testing, data analysis and modelling, providing understanding of behavior (program/erase, endurance, retention, ...), as well as working closely with integration and process teams to optimize Flash performance and manufacturability.

This job comes from a partnership with Science Magazine and Euraxess

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